Mechanical stresses during the formation of MDS structures on indium arsenide
Identifieur interne : 000106 ( Main/Exploration ); précédent : 000105; suivant : 000107Mechanical stresses during the formation of MDS structures on indium arsenide
Auteurs : RBID : ISTEX:11182_1995_Article_BF00569801.pdfAbstract
A study is made of the mechanical stresses arising during all the stages of fabrication of dielectric—semiconductor structures on indium arsenide with an anodic oxide. It is shown that grinding, electrodynamic polishing, and oxidation lead to the appearance in the semiconductor of tensile stresses and in the anodic oxide of compressive stresses, which may be one possible cause of the high density of surface states in MDS structure on indium arsenide with an anodic oxide.
DOI: 10.1007/BF00569801
Links toward previous steps (curation, corpus...)
Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title>Mechanical stresses during the formation of MDS structures on indium arsenide</title><author><name>V. S. Slavnikov</name><affiliation wicri:level="1"><mods:affiliation>Tomsk State Academy of Control Systems and Electronics, Russia</mods:affiliation><country xml:lang="fr">Russie</country><wicri:regionArea>Tomsk State Academy of Control Systems and Electronics</wicri:regionArea></affiliation></author><author><name>L. P. Potseluev</name><affiliation wicri:level="1"><mods:affiliation>Tomsk State Academy of Control Systems and Electronics, Russia</mods:affiliation><country xml:lang="fr">Russie</country><wicri:regionArea>Tomsk State Academy of Control Systems and Electronics</wicri:regionArea></affiliation></author><author><name>N. S. Nesmelov</name><affiliation wicri:level="1"><mods:affiliation>Tomsk State Academy of Control Systems and Electronics, Russia</mods:affiliation><country xml:lang="fr">Russie</country><wicri:regionArea>Tomsk State Academy of Control Systems and Electronics</wicri:regionArea></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:11182_1995_Article_BF00569801.pdf</idno><date when="1995">1995</date><idno type="doi">10.1007/BF00569801</idno><idno type="wicri:Area/Main/Corpus">000847</idno><idno type="wicri:Area/Main/Curation">000847</idno><idno type="wicri:Area/Main/Exploration">000106</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">A study is made of the mechanical stresses arising during all the stages of fabrication of dielectric—semiconductor structures on indium arsenide with an anodic oxide. It is shown that grinding, electrodynamic polishing, and oxidation lead to the appearance in the semiconductor of tensile stresses and in the anodic oxide of compressive stresses, which may be one possible cause of the high density of surface states in MDS structure on indium arsenide with an anodic oxide.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="9383f59b5c82e0fd435f13b889fcfe083012f04d"><titleInfo lang="eng"><title>Mechanical stresses during the formation of MDS structures on indium arsenide</title></titleInfo><name type="personal"><namePart type="given">V. S.</namePart><namePart type="family">Slavnikov</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Tomsk State Academy of Control Systems and Electronics, Russia</affiliation></name><name type="personal"><namePart type="given">L. P.</namePart><namePart type="family">Potseluev</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Tomsk State Academy of Control Systems and Electronics, Russia</affiliation></name><name type="personal"><namePart type="given">N. S.</namePart><namePart type="family">Nesmelov</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Tomsk State Academy of Control Systems and Electronics, Russia</affiliation></name><typeOfResource>text</typeOfResource><genre>Solid State Physics</genre><genre>Original Paper</genre><originInfo><publisher>Kluwer Academic Publishers-Plenum Publishers, New York</publisher><dateCreated encoding="w3cdtf">1994-04-18</dateCreated><dateValid encoding="w3cdtf">2004-10-15</dateValid><copyrightDate encoding="w3cdtf">1995</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">A study is made of the mechanical stresses arising during all the stages of fabrication of dielectric—semiconductor structures on indium arsenide with an anodic oxide. It is shown that grinding, electrodynamic polishing, and oxidation lead to the appearance in the semiconductor of tensile stresses and in the anodic oxide of compressive stresses, which may be one possible cause of the high density of surface states in MDS structure on indium arsenide with an anodic oxide.</abstract><relatedItem type="series"><titleInfo type="abbreviated"><title>Russ Phys J</title></titleInfo><titleInfo><title>Russian Physics Journal</title><partNumber>Year: 1995</partNumber><partNumber>Volume: 37</partNumber><partNumber>Number: 12</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1994-12-01</dateIssued><copyrightDate encoding="w3cdtf">1995</copyrightDate></originInfo><subject usage="primary"><topic>Physics</topic><topic>Physics, general</topic><topic>Mathematical and Computational Physics</topic><topic>Nuclear Physics, Heavy Ions, Hadrons</topic><topic>Condensed Matter</topic><topic>Applied Optics, Optoelectronics, Optical Devices</topic></subject><identifier type="issn">1064-8887</identifier><identifier type="issn">Electronic: 1573-9228</identifier><identifier type="matrixNumber">11182</identifier><identifier type="local">IssueArticleCount: 13</identifier><recordInfo><recordOrigin>Plenum Publishing Corporation, 1995</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00569801</identifier><identifier type="matrixNumber">Art11</identifier><identifier type="local">BF00569801</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>1185</start><end>1187</end></extent></part><recordInfo><recordOrigin>Plenum Publishing Corporation, 1995</recordOrigin><recordIdentifier>11182_1995_Article_BF00569801.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV1/Data/Main/Exploration
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000106 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Exploration/biblio.hfd -nk 000106 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV1
|flux= Main
|étape= Exploration
|type= RBID
|clé= ISTEX:11182_1995_Article_BF00569801.pdf
|texte= Mechanical stresses during the formation of MDS structures on indium arsenide
}}
| This area was generated with Dilib version V0.5.81. |  |